dated : 07/12/2002 ? semtech electronics ltd. ( subsidiary of sino-tech internati onal holdings limited, a company listed on the hong kong stock exchange, stock code: 724 ) LL101A...ll101c silicon schottky barrier diodes for general purpose applications the ll101 series is a metal on silicon schottky barrier device which is protected by a pn junction guard ring. the low forward voltage drop and fast switching make it ideal for protection of mos devices, steering, biasing and coupling diodes for fast switching and low logic level applications. this diode is also available in do-35 case with type designation sd101a, b, c. absolute maximum ratings (t a = 25 o c) symbol value unit peak reverse voltage LL101A ll101b ll101c v rrm v rrm v rrm 60 50 40 v v v power dissipation (infinite heatsink) p tot 400 1) mw max. single cycle surge 10 s squarewave i fsm 2 a junction temperature t j 200 o c storage temperature range t s -55 to +200 o c 1) valid provided that electrodes ar e kept at ambient temperature.
dated : 07/12/2002 ? semtech electronics ltd. ( subsidiary of sino-tech internati onal holdings limited, a company listed on the hong kong stock exchange, stock code: 724 ) LL101A...ll101c characteristics at t amb = 25 o c symbol min. typ. max. unit reverse breakdown voltage at i r = 10 a LL101A ll101b ll101c v (br)r v (br)r v (br)r 60 50 40 - - - - - - v v v forward voltage drop at i f = 1ma at i f = 15ma LL101A ll101b ll101c LL101A ll101b ll101c v f v f v f v f v f v f - - - - - - - - - - - - 0.41 0.4 0.39 1 0.95 0.9 v v v v v v leakage current at v r = 50v at v r = 40v at v r = 30v LL101A ll101b ll101c i r i r i r - - - - - - 200 200 200 na na na junction capacitance at v r = 0v, f = 1mhz LL101A ll101b ll101c c tot c tot c tot - - - - - - 2.0 2.1 2.2 pf pf pf reverse recovery time at i f = i r = 5ma , recover to 0.1 i r t rr - - 1 ns
dated : 07/12/2002 ? semtech electronics ltd. ( subsidiary of sino-tech internati onal holdings limited, a company listed on the hong kong stock exchange, stock code: 724 ) 0.1 1 0 c t 75 c o i r 0 0.1 0.01 2 5 5 2 1 2 v r 50v 10 20 30 40 25 c o 50 c o typical variation of reverse current at various temperatures 0 100 5 10 2 5 a 0.01 2 5 ll101 o 100 c 125 c o 150 c o v f 1v 0.5 20 a v r 0 0 10 30 20 40 b c 50v ll101 tj=25 c typical capacitance curve as a function of reverse voltage pf 2 o v f 0.5 0 1v 100 ma typical variation of fwd. current vs. fwd. voltage for primary conduction through the schottky barrier ma 1 2 i f 5 2 5 10 ll101 c a b 40 i f 60 80 ll101 c a b typical forward conduction curve of combination schottky barrier and pn junction guard ring LL101A...ll101c
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